technical data pnp high power silicon transistor qualified per mil - prf - 19500/433 devices qualified level 2n4399 2n5745 jantx jantxv maximum ratings ratings symbol 2n4399 2n5745 unit collector - emitter voltage v ceo 60 80 vdc collector - base voltage v cbo 60 80 vdc emitter - base voltage v ebo 5.0 vdc base current i b 7.5 adc collector current i c 30 20 adc total power dissipation @ t a =+ 25 0 c (1) @ t c = +100 0 c (2) p t 5.0 115 w w operating & storage junction temperature range t j , t stg - 55 to +200 0 c thermal characteristics characteristics symbol max. unit thermal resistance, junction - to - case junction - to - ambient r q jc r q ja 3 0.875 35 0 c/w 1) derate linearly @ 28.57 mw/ 0 c f or t a > +25 0 c 2) derate linearly @ 1.15 w/ 0 c for t c > +100 0 c *see appendix a for package outline electrical characteristics (t a = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown voltag e i c = 200 madc 2n4399 2n5745 v (br) ceo 60 80 vdc collector - emitter cutoff current v ce = 60 vdc 2n4399 v ce = 80 vdc 2n5745 i ceo 100 100 m adc collector - emitter cutoff current v ce = 60 vdc, v be = 1.5 vdc 2n4399 v ce = 80 vdc, v be = 1.5 vdc 2n5745 i cex 5.0 5.0 m adc emitter - base cutoff current v eb = 5.0 vdc i ebo 5.0 m adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2 to - 3* (to - 204aa)
2n43 99, 2n5745 jan series electrical characteristics (con?t) characteristics symbol min. max. unit on characteristics (3) forward - current transfer ratio i c = 1.0 adc, v ce = 2.0 vdc i c = 15 adc, v ce = 2.0 vdc 2n4399 i c = 10 adc, v ce = 2.0 vdc 2n5745 i c = 30 adc, v ce = 5.0 vdc 2n4399 i c = 20 adc, v ce = 5.0 vdc 2n5745 h fe 40 15 15 5.0 5.0 425 60 60 collector - emitter saturation voltage i c = 5.0 adc, i b = 0.5 adc i c = 10 adc, i b = 1.0 adc 2n4399 2n5745 v ce(sat) 0.55 0.75 1.0 vdc base - emitter saturation voltage i c = 10 adc, i b = 1.0 adc i c = 15 adc, i b = 1.5 adc 2n4399 2n5745 v be(sat) 1.7 1.8 2.0 vdc dynamic characteristics magnitude of common emitter small - signal short - circuit forward current transfer rati o i c = 1.0 adc, v ce = 10 vdc, f = 1.0 mhz ? h fe ? 4.0 40 small - signal short - circuit forward current transfer ratio i c = 1.0 adc, v ce = 10 vdc, f = 1.0 mhz h fe 40 425 output capacitance v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 1000 pf safe operating area dc tests t c = +25 0 c, 1 cycle, t = 1.0 s test 1 v ce = 6.67 vdc, i c = 30 adc 2n4399 v ce = 10 vdc, i c = 20 adc 2n5745 test 2 v ce = 20 vdc, i c = 10 adc all types test 3 v ce = 40 vdc, i c = 3.0 adc all types test 4 v ce = 5 0 vdc, i c = 600 madc 2n4399 v ce = 60 vdc, i c = 600 madc 2n5745 (3) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
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